ARE SELF-INTERSTITIALS REQUIRED TO EXPLAIN NONEQUILIBRIUM DIFFUSION PHENOMENON IN SILICON?

被引:0
|
作者
Marioton, B.P.R. [1 ]
Gosele, U. [1 ]
Tan, T.Y. [1 ]
机构
[1] Duke Univ, Durham, NC, USA, Duke Univ, Durham, NC, USA
来源
Chemtronics | 1986年 / 1卷 / 04期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
42
引用
收藏
页码:156 / 160
相关论文
共 50 条
  • [2] Self-interstitials in silicon
    Seeger, A
    SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2, 1998, : 215 - 219
  • [3] Self-interstitials in silicon
    Okino, T
    Shimosaki, T
    Takaue, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (11): : 6592 - 6594
  • [4] Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions
    Kube, R.
    Bracht, H.
    Hueger, E.
    Schmidt, H.
    Hansen, J. Lundsgaard
    Larsen, A. Nylandsted
    Ager, J. W., III
    Haller, E. E.
    Geue, T.
    Stahn, J.
    PHYSICAL REVIEW B, 2013, 88 (08):
  • [5] VACANCIES AND SELF-INTERSTITIALS IN SILICON - GENERATION AND INTERACTION IN DIFFUSION
    HU, SM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (07) : 2066 - 2075
  • [6] THE DIFFUSIVITY OF SILICON SELF-INTERSTITIALS
    TAYLOR, W
    MARIOTON, BPR
    TAN, TY
    GOSELE, U
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1989, 112 (1-2): : 131 - 150
  • [7] Self-interstitials in irradiated silicon
    Mukashev, BN
    Abdullin, KA
    Gorelkinskii, YV
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 541 - 546
  • [8] Comment on "Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions"
    Suezawa, Masashi
    Iijima, Yoshiaki
    Yonenaga, Ichiro
    PHYSICAL REVIEW B, 2014, 90 (11):
  • [9] Annihilation of self-interstitials by dislocations in silicon as studied by gold diffusion
    Mariani, G
    Pichaud, B
    Yakimov, E
    POLYCRYSTALLINE SEMICONDUCTORS IV - PHYSICS, CHEMISTRY AND TECHNOLOGY, 1996, 51-5 : 3 - 14
  • [10] Reply to "Comment on 'Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions' "
    Kube, R.
    Bracht, H.
    Hueger, E.
    Schmidt, H.
    Hansen, J. Lundsgaard
    Larsen, A. Nylandsted
    Ager, J. W., III
    Haller, E. E.
    Geue, T.
    Stahn, J.
    Uematsu, M.
    Itoh, K. M.
    PHYSICAL REVIEW B, 2014, 90 (11):