Electrical characterization of the gallium acceptor in 4H- and 6H-SiC

被引：0
|
作者：
Troffer, T. [1 ]
Pensl, G. [1 ]
Schoner, A. [1 ]
Henry, A. [1 ]
Hallin, C. [1 ]
Kordina, O. [1 ]
Janzen, E. [1 ]
机构：
[1] Univ of Erlangen, Erlangen, Germany
来源：
Materials Science Forum | 1998年 / 264-268卷 / pt 1期
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摘要：
11
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页码：557 / 560
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