Room-temperature scanning photoluminescence for mapping the lifetime and the doping density in compound semiconductors

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机构：
[1] Krawczyk, S.K.
[2] Nuban, M.F.
来源：
Krawczyk, S.K. | 1600年 / Elsevier Science S.A., Lausanne, Switzerland卷 / B28期
关键词：
Computer software - Density (optical) - Energy gap - Lasers - Light emission - Mathematical models - Nondestructive examination - Optical variables measurement - Photoluminescence - Service life - Substrates;
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摘要：
It is demonstrated that room-temperature spectrally integrated scanning photoluminescence (I-SPL) measurements can provide direct information on the spatial uniformity of the non-radiative lifetime and of the doping density in compound semiconductor substrates. This new experimental approach is based on I-SPL measurements performed at different excitation levels. The data obtained are treated using a simple theoretical model and the software developed in this work.
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