Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors

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Department of Electrical Engineering, National Taiwan-Ocean University, Keelung, Taiwan [1 ]
不详 [2 ]
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Appl Phys Lett | / 15卷 / 2155-2157期
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All Open Access; Bronze;
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摘要：
High electron mobility transistors
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