Charge collection efficiency in heavily irradiated silicon diodes

被引：0
|
作者：
Lancaster Univ, Lancaster, United Kingdom [1 ]
机构：
来源：
Nucl Instrum Methods Phys Res Sect A | / 2-3卷 / 238-246期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Charge collection efficiency in heavily irradiated silicon diodes
    Beattie, L
    Brodbeck, TJ
    Chilingarov, A
    Hughes, G
    Ratoff, P
    Sloan, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1998, 412 (2-3): : 238 - 246
  • [2] Recovery of charge collection in heavily irradiated silicon diodes with continuous hole injection
    Cindro, V
    Mandic, I
    Kramberger, G
    Mikuz, M
    Zavrtanik, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2004, 518 (1-2): : 343 - 345
  • [3] Temperature dependence of the charge collection efficiency in heavily irradiated silicon detectors
    Bell, William H.
    Casagrande, Luca
    Da Via, Cinzia
    Granata, Valeria
    Palmieri, Vittorio G.
    Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999, 435 (1-2): : 187 - 193
  • [4] Temperature dependence of the charge collection efficiency in heavily irradiated silicon detectors
    Bell, WH
    Casagrande, L
    Da Via, C
    Granata, V
    Palmieri, VG
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 435 (1-2): : 187 - 193
  • [5] Study of anomalous charge collection efficiency in heavily irradiated silicon strip detectors
    Mikuz, M.
    Cindro, V.
    Kramberger, G.
    Mandic, I.
    Zavrtanik, M.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2011, 636 : S50 - S55
  • [6] Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes
    Boscardin, M
    Bruzzi, M
    Candelori, A
    Dalla Betta, GF
    Focardi, E
    Khomenkov, V
    Piemonte, C
    Ronchin, S
    Tosi, C
    Zorzi, N
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (04) : 1048 - 1053
  • [7] Charge collection and noise analysis of heavily irradiated silicon detectors
    Borchi, E
    Bruzzi, M
    Leroy, C
    Pirollo, S
    Sciortino, S
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (02) : 141 - 145
  • [8] Charge collection properties of heavily irradiated epitaxial silicon detectors
    Kramberger, G
    Cindro, V
    Dolenc, I
    Fretwurst, E
    Lindström, G
    Mandic, I
    Mikuz, M
    Zavrtanik, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 554 (1-3): : 212 - 219
  • [9] Charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias
    Mandic, I
    Cindro, V
    Kramberger, G
    Mikuz, M
    Zavrtanik, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2004, 533 (03): : 442 - 453
  • [10] Evidence for charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures
    Palmieri, VG
    Borer, K
    Janos, S
    Da Via, C
    Casagrande, L
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1998, 413 (2-3): : 475 - 478
12345