Microcavity-based semiconductor lasers for near- and deep-UV applications

被引：0
|
作者：
Bidnyk, S. [1 ]
Lam, J.B. [1 ]
Little, B.D. [1 ]
Kwon, Y.H. [1 ]
Song, J.J. [1 ]
Bulman, G.E. [1 ]
Kong, H.W. [1 ]
机构：
[1] Oklahoma State Univ, Stillwater, OK, United States
来源：
| 2000年 / IEEE, Piscataway卷
关键词：
Microcavity - Semiconducting aluminum gallium nitride - Semiconducting gallium nitride;
D O I：
10.1109/cleo.2000.906695
中图分类号：
学科分类号：
摘要：
Efficient microcavity-based ultraviolet lasing in GaN/AlGaN separate confinement heterostructures was achieved. The low lasing threshold and improved lasing efficiency indicate that this medium is suitable for the development of the ultraviolet laser diodes.
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