Fabrication of ramp-edge junction with NdBa2Cu3Oy-based interface-modified barrier

被引：0
|
作者：
Makita, Takehiko [1 ]
Toma, Kazuyoshi [1 ]
Ishikawa, Kazuhiro [1 ]
Zama, Hideaki [1 ]
Tano, Hiroyoshi [1 ]
Tanabe, Keiichi [1 ]
机构：
[1] ISTEC, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2000年 / 39卷 / 07期
关键词：
D O I：
10.1143/jjap.39.l730
中图分类号：
学科分类号：
摘要：
Semiconductor junctions
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