IMPROVEMENT OF VTH CONTROL FOR GAAS FET`S BY SHALLOW-CHANNEL ION IMPLANTATION.

被引：0
|
作者：
Kasahara, Jiro [1 ]
Arai, Michio [1 ]
Watanabe, Naozo [1 ]
机构：
[1] Sony Corp Research Cent, Yokohama, Jpn, Sony Corp Research Cent, Yokohama, Jpn
来源：
IEEE Transactions on Electron Devices | 1986年 / ED-33卷 / 01期
关键词：
SEMICONDUCTING GALLIUM ARSENIDE - Ion Implantation - Substrates - TRANSISTORS; FIELD EFFECT - Electric Properties;
D O I：
10.1109/t-ed.1986.22432
中图分类号：
学科分类号：
摘要：
Fluctuation of a net electrical activity of implanted impurities is thought to be the main origin of fluctuations in the threshold voltage (V//t //h ) of GaAs FETs which have a channel layer formed by ion implantation directly into semi-insulating substrates. Net electrical activity is affected by several factors, such as implantation damage and the nature of the substrate. Calculation of V//t //h predicts that a shallow channel is advantageous for reducing the fluctuation of V//t //h when the fluctuation of the net activity of implanted impurities predominates over that of the V//t //h . The advantage of the shallow channel is verified experimentally by a through-film implantation technique, which is one way to realize the shallow-channel FET.
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页码：28 / 33
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