Non-defective area analysis for quantifying yield impact

被引：0
|
作者：
Ono, Makoto [1 ]
Iwata, Hisafumi [1 ]
Nemoto, Kazunori [1 ]
Watanabe, Kenji [1 ]
机构：
[1] Hitachi, Ltd, Japan
来源：
IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings | 1999年
关键词：
Crystal defects - Inspection - Semiconductor device testing;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The present paper introduces a novel yield impact quantification method which is designed especially to have robustness to clustered defects and false detection by inspection tools. The yield impact can be obtained by non-defective area analysis of cumulative defect maps. The accuracy of the proposed method is discussed based on experimental results that were obtained using actual in-line inspection data. Application of the proposed method is contributing to rapid yield ramp-up.
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页码：127 / 130
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