ABSORPTIVITY OF THE X1 SIGMA -A2 PI AND X1 SIGMA - SIGMA 1 SIGMA ELECTRON BANDS OF HIGH-TEMPERATURE SiO VAPOR.

被引：0
|
作者：
Matveev, V.S.
机构：
来源：
Journal of applied spectroscopy | 1986年 / 45卷 / 02期
关键词：
BAND STRUCTURE - Spectrum analysis;
D O I：
10.1007/BF00657454
中图分类号：
学科分类号：
摘要：
This paper shows the possibility of calculating the absorption characteristics of the most intense X**1 SIGMA -A**1 PI and X**1 SIGMA -E**1 SIGMA bands of SiO vapor in the 2000-10,000 degree K temperature range, by means of a random Elzasser band model approximated to a composite line contour. The random Elzasser band model consists of a statistical superposition of the different Elzasser subbands, each with its own parameters.
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页码：769 / 773
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