Ta/Si(111) INTERFACE FORMATION.

被引：0

作者：

Azizan, M. ^{[1
]}

Tan, T.A.Nguyen ^{[1
]}

Derrien, J. ^{[1
]}

Baptist, R. ^{[1
]}

Brenac, A. ^{[1
]}

Chauvet, G. ^{[1
]}

机构：

[1] CNRS, Grenoble, Fr, CNRS, Grenoble, Fr

来源：

Vide, les Couches Minces | 1987年 / 42卷 / 236期

关键词：

ELECTRONS - Diffraction - INTEGRATED CIRCUITS; VLSI - Fabrication - SEMICONDUCTOR DEVICES - Semiconductor Metal Boundaries - SPECTROSCOPY; ELECTRON - Applications - TANTALUM COMPOUNDS - Thin Films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Microscopic studies of the formation of metal-semiconductor interfaces are studied for the Ta/Si(111) surface. Experiments were carried out in a UHV (5 multiplied by (times) 10** minus **1**1mbar base pressure) ESCA equipped with UPS and LEED facilities. The Si(111) (7 multiplied by 7) clean surfaces were obtained by classical ion-bombardment and annealing cycles and maintained at room temperature during evaporation. Ta was evaporated at 2700 degree C by electron bombardment of a Ta tip. The measurement results are presented and discussed.

引用

页码：9 / 11

共 50 条

[1] TA/SI(111) INTERFACE FORMATION
AZIZAN, M
TAN, TAN
DERRIEN, J
BAPTIST, R
BRENAC, A
CHAUVET, G
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1987, 42 (236): : 9 - 11
[2] Formation of the CeSix/Si(111) interface
Manke, I.
Wen, H.J.
Hoehr, A.
Bauer, A.
Daehne-Prietsch, M.
Kaindl, G.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1995, 13 (04): : 1657 - 1665
[3] FORMATION OF THE CESIX/SI(111) INTERFACE
MANKE, I
WEN, HJ
HOHR, A
BAUER, A
DAHNEPRIETSCH, M
KAINDL, G
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04): : 1657 - 1665
[4] SILICIDE FORMATION AT THE TI/SI(111) INTERFACE
CHAMBERS, SA
DELGIUDICE, M
HILL, DM
XU, F
JOYCE, JJ
RUCKMAN, MW
WEAVER, JH
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1508 - 1509
[5] FORMATION OF THE PT-SI(111) INTERFACE
MORGEN, P
SZYMONSKI, M
ONSGAARD, J
JORGENSEN, B
ROSSI, G
SURFACE SCIENCE, 1988, 197 (03) : 347 - 362
[6] Silicide formation in the Ta/Ti/Si system by reaction of codeposited Ta and Ti with Si (100) and Si (111) substrates
Pelleg, J
Goldshleger, N
JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) : 1531 - 1539
[7] Silicide formation in the Ta/Ti/Si system by reaction of codeposited Ta and Ti with Si (100) and Si (111) substrates
J Appl Phys, 3 (1531):
[8] STRUCTURAL STUDIES OF THE MG/SI(111) INTERFACE FORMATION
VANDRE, D
INCOCCIA, L
KAINDL, G
SURFACE SCIENCE, 1990, 225 (03) : 233 - 241
[9] Formation of Co and Ta silicides on Si(111) and Si(100) substrates from codeposited Co and Ta thin films
Pelleg, J
THIN SOLID FILMS, 1998, 325 (1-2) : 60 - 71
[10] EFFECTS OF ADATOM CONCENTRATION ON AU/SI(111) AND SI/AU INTERFACE FORMATION
MOLODTSOV, SL
LAUBSCHAT, C
SHIKIN, AM
ADAMCHUK, VK
SURFACE SCIENCE, 1992, 269 : 988 - 994

← 1 2 3 4 5 →