On the 1/f noise in polysilicon emitter bipolar transistors: Coherence between base current noise and emitter series resistance noise

被引：0
|
作者：
Markus, H.A.W. [1 ]
Roche, Ph. [1 ]
Kleinpenning, T.G.M. [1 ]
机构：
[1] Eindhoven Univ of Technology, Eindhoven, Netherlands
来源：
| 1997年 / Elsevier Science Ltd, Oxford, United Kingdom卷 / 41期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
相关论文
共 50 条
  • [1] On the 1/f noise in polysilicon emitter bipolar transistors: Coherence between base current noise and emitter series resistance noise
    Markus, HAW
    Roche, P
    Kleinpenning, TGM
    SOLID-STATE ELECTRONICS, 1997, 41 (03) : 441 - 445
  • [2] On the origin of 1/f noise in polysilicon emitter bipolar transistors
    Deen, MJ
    Rumyantsev, SL
    Schroter, M
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) : 1192 - 1195
  • [3] Low frequency (1/f) noise model for the base current in polysilicon emitter bipolar junction transistors
    Mounib, A
    Ghibaudo, G
    Balestra, F
    Pogany, D
    Chantre, A
    Chroboczek, J
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (06) : 3330 - 3336
  • [4] Low frequency (1/f) noise model for the base current in polysilicon emitter bipolar junction transistors
    J Appl Phys, 6 (3330):
  • [5] REDUCTION OF 1/F NOISE IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS
    SIABISHAHRIVAR, N
    REDMANWHITE, W
    ASHBURN, P
    KEMHADJIAN, HA
    SOLID-STATE ELECTRONICS, 1995, 38 (02) : 389 - 400
  • [6] 1/f noise in submicron BiCMOS polysilicon emitter bipolar junction transistors
    Llinares, P
    Celi, D
    Roux-dit-Buisson, O
    Ghibaudo, G
    Chroboczek, JA
    NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE, 1997, : 181 - 184
  • [7] Temperature dependence of 1/f noise in polysilicon-emitter bipolar transistors
    Zhao, EH
    Çelik-Butler, Z
    Thiel, F
    Dutta, R
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (12) : 2230 - 2236
  • [8] Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors
    J Appl Phys, 5 (2671):
  • [9] Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors
    Llinares, P
    Celi, D
    RouxditBuisson, O
    Ghibaudo, G
    Chroboczek, JA
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) : 2671 - 2675
  • [10] Comparison of 1/f noise in complementary NPN and PNP polysilicon emitter bipolar transistors
    Hoque, MMU
    Çelik-Butler, Z
    Trogolo, J
    Weiser, D
    Green, K
    Noise in Devices and Circuits III, 2005, 5844 : 120 - 131
12345