A NEW POSSIBILITY OF USING THE FIELD EFFECT FOR INVESTIGATING SURFACE-STATE PROPERTIES.

A theoretical analysis is made of the change in the dc conductance of a semiconductor under the influence of an external hf electric field (hf field effect) in the case of continuous energy spectrum of the surface states. Consideration is given to the possibility of determination of the electrostatic surface potential and energy spectrum of the surface states from combined measurements of the hf and lf field effects. The advantage of such a method over others could be the possibility of measuring the electrostatic surface potential in a wide range of its values by applying small-amplitude electric fields.