共 50 条
- [2] DISLOCATION REDUCTION IN HGCDTE ON GAAS AND SI JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1492 - 1498
- [3] DISLOCATION DENSITY REDUCTION BY THERMAL ANNEALING OF HGCDTE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03): : 1646 - 1650
- [6] Dislocation Reduction of HgCdTe/Si Through Ex Situ Annealing Journal of Electronic Materials, 2010, 39 : 967 - 973
- [7] Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si Journal of Electronic Materials, 2011, 40 : 1727 - 1732
- [9] REDUCTION OF DISLOCATION DENSITY IN SI BY THERMAL CYCLIC ANNEALING PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (01): : 57 - 63