N-channel metal-oxide-semiconductor device with the step-functional I- V curves caused by the punch-through between drain and inversion layer of the gate

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作者：
Karasawa, Sh. [1 ]
Yamanouchi, K. [1 ]
Omori, J. [1 ]
机构：
[1] Miyagi Natl Coll of Technology, Miyagi, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1995年 / 34卷 / 10 A期
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