HBT technology and applications, today and tomorrow

被引：0

作者：

Lee, F. ^{[1
]}

Kinoshita, G. ^{[1
]}

Chang, M.F. ^{[1
]}

机构：

[1] Rockwell Int, Newbury Park, United States

来源：

Alta Frequenza Rivista Di Elettronica | 1994年 / 6卷 / 05期

关键词：

Material structure - Process technology;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：27 / 32

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