Comparison of SiO2 and AlN as gate dielectric for SiC MOS structures

被引：0
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作者：
Zetterling, C.-M. [1 ]
Ostling, M. [1 ]
Harris, C.I. [1 ]
Nordell, N. [1 ]
Wongchotigul, K. [1 ]
Spencer, M.G. [1 ]
机构：
[1] Royal Inst of Technology, Kista, Sweden
来源：
Materials Science Forum | 1998年 / 264-268卷 / pt 2期
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页码：877 / 880
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