New interpretation for visible photoluminescence in porous silicon

被引：3
|
作者：
Kondo, Michio [1 ]
机构：
[1] Univ of Tokyo, Tokyo, Japan
来源：
Journal of Non-Crystalline Solids | 1993年 / 164-66卷 / pt 2期
关键词：
Mathematical models - Photoluminescence - Porous materials - Silicon - Solid state physics - Superlattices;
D O I：
10.1016/0022-3093(93)91152-S
中图分类号：
学科分类号：
摘要：
Time-resolved (TR) photoluminescence (PL) measurements for porous silicon have been performed in the temperature region between 7 and 300 K. The PL decay consists of a subnanosecond component and a microsecond component at room temperature. The slower component is well described by a stretched exponential function, and the relaxation time shows the temperature dependence of exp(-A T-1/ 4), where A is a constant. Taking recent ESR results into account, we propose a new model for the visible PL from porous silicon.
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页码：941 / 944
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