UV-blocking technology to reduce plasma-induced transistor damage in ferroelectric devices with low hydrogen resistance

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|

作者：

Shuto, Susumu ^{[1
]}

Kunishima, Iwao ^{[1
]}

Tanaka, Shinichi ^{[1
]}

机构：

[1] Toshiba Corp, Kawasaki, Japan

来源：

Annual Proceedings - Reliability Physics (Symposium) | 1999年

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页码：356 / 361

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[1] UV-blocking technology to reduce plasma-induced transistor damage in ferroelectric devices with low hydrogen resistance.
Shuto, S
Kunishima, I
Tanaka, S
1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL, 1999, : 356 - 361