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- [9] Comparative study of DC and microwave characteristics of 0.12 μm double-recessed gate AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistors using dielectric-assisted process JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B): : 3358 - 3363