Characterization of proton-irradiated InGaAs/GaAs multiple quantum well structures by nonresonant transient four-wave mixing technique

被引：0
|
作者：
Jarasiunas, Kestutis [1 ]
Mizeikis, Vygantas [1 ]
Iwamoto, Satoshi [2 ]
Nishioka, Masao [2 ]
Someya, Takao [2 ]
Fukutani, Katsuyuki [2 ]
Arakawa, Yasuhiko [3 ]
Shimura, Tsutomu [2 ]
Kuroda, Kazuo [2 ]
机构：
[1] Inst. of Mat. Sci. and Appl. Res., Vilnius University, Build. III, Sauletekio al. 9, Vilnius 2040, Lithuania
[2] Institute of Industrial Science, University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505, Japan
[3] Res. Ctr. for Adv. Sci. and Technol., University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8904, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 10期
关键词：
D O I：
10.1143/jjap.39.5781
中图分类号：
学科分类号：
摘要：
23
引用
收藏
页码：5781 / 5787
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