Pulse height of MIP's in an n-side silicon microstrip detector after proton irradiation with a fluence of 1 × 1015 p cm-2

被引:0
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作者
Gomez, A. [1 ]
Kroeger, W. [1 ]
Nissen, T. [1 ]
Sadrozinski, H.F.-W. [1 ]
Wichmann, R. [1 ]
Emes, J. [1 ]
Gilchriese, M.G.D. [1 ]
Siegrist, J. [1 ]
Wappler, F. [1 ]
Unno, Y. [1 ]
Ohsugi, T. [1 ]
机构
[1] Univ of California, Santa Cruz, United States
来源
IEEE Transactions on Nuclear Science | 1998年 / 45卷 / 3 pt 1期
关键词
Colliding beam accelerators - Irradiation - Microstrip devices - Particle beams - Protons - Ruthenium - Spurious signal noise - Temperature control;
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学科分类号
摘要
We have irradiated an n-side silicon microstrip detector to an equivalent high energy fluence of 1 × 1015 p cm-2 using 55 MeV protons. We determined the median pulse height to be 0.7 fC at a bias voltage of 180 V, and deduced a depletion region of about 80 μm.
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页码:327 / 330
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    Wichmann, R
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