Copper metallization of barrier materials

被引:0
|
作者
Patterson, J.C.
Ni Dheasuna, C.
Barrett, J.
机构
来源
| 1995年
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] CHARACTERISTICS OF THE OXIDATION BARRIER LAYERS FOR COPPER METALLIZATION
    LEE, KI
    MIN, KI
    JOO, SK
    RHA, KG
    KIM, WS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B): : 1016 - 1020
  • [2] Barrier and seed layers for damascene copper metallization
    Chin, B
    Ding, PJ
    Sun, BX
    Chiang, T
    Angelo, D
    Hashim, I
    Xu, Z
    Edelstein, S
    Chen, FS
    SOLID STATE TECHNOLOGY, 1998, 41 (07) : 141 - +
  • [3] Characteristics of the oxidation barrier layers for copper metallization
    Lee, Kyung-Il, 1600, JJAP, Minato-ku, Japan (34):
  • [4] An effective diffusion barrier metallization process on copper
    So, WW
    Choe, S
    Chuang, R
    Lee, CC
    THIN SOLID FILMS, 2000, 376 (1-2) : 164 - 169
  • [5] Barrier layer effects on reliabilities of copper metallization
    Yang, ZW
    Zhang, DH
    Li, CY
    Tan, CM
    Prasad, K
    THIN SOLID FILMS, 2004, 462 : 288 - 291
  • [6] A barrier metallization technique on copper substrates for soldering applications
    So, WW
    Choe, S
    Chuang, R
    Lee, CC
    50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS, 2000, : 855 - 860
  • [7] Characteristics of WN diffusion barrier layer for copper metallization
    Kwak, MY
    Shin, DH
    Kang, TW
    Kim, KN
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 174 (01): : R5 - R6
  • [8] Diffusion barrier properties of amorphous ZrCN films for copper metallization
    Chen, CS
    Liu, CP
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2005, 351 (49-51) : 3725 - 3729
  • [9] Dielectric Barrier in the Subtractive Process of Formation of a Copper Metallization System
    Orlov A.A.
    Rezvanov A.A.
    Gvozdev V.A.
    Orlov G.A.
    Seregin D.S.
    Kuznetsov P.I.
    Blumberg T.
    Veselov A.A.
    Suzuki T.
    Morozov E.N.
    Vorotilov K.A.
    Russian Microelectronics, 2022, 51 (06) : 470 - 479
  • [10] Diffusion barrier property of molybdenum nitride films for copper metallization
    Lee, JY
    Park, JW
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (08): : 4280 - 4284