SELECTIVE EXCITATION OF WAVEGUIDE MODES AND MEASUREMENT OF THE PARAMETERS OF AlxGa1 -xAs-GaAs FILM HETEROSTRUCTURES INTENDED FOR INTEGRATED OPTICS APPLICATIONS.

被引：0
|
作者：
Bykovskii, Yu.A.
Makovkin, A.V.
Smirnov, V.L.
机构：
来源：
| 1975年 / 4卷 / 08期
关键词：
INTEGRATED OPTICS;
D O I：
10.1070/qe1975v004n08abeh011162
中图分类号：
学科分类号：
摘要：
An investigation is made of a method for effective coupling of laser radiation ( lambda equals 1. 15 mu ) by a prism into thin (5 - 15 mu ) GaAs films grown epitaxially on Al//xGa//1// minus //xAs substrates. Waveguide modes are excited selectively. The optical parameters of the waveguides are deduced from the measured phase-matching angles of the excited modes.
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页码：1050 / 1051
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