ENERGY STRUCTURE OF NARROW-BAND SOLID SOLUTIONS OF III-V COMPOUNDS CONTAINING Tl AND Bi.

被引：0

作者：

Grinyaev, S.N. ^{[1
]}

Nyavro, A.V. ^{[1
]}

Chaldyshev, V.A. ^{[1
]}

机构：

[1] Tomsk State Univ, V. D. Kuznetsov, Siberian Physicotechnical Inst,, Tomsk, USSR, Tomsk State Univ, V. D. Kuznetsov Siberian Physicotechnical Inst, Tomsk, USSR

来源：

Soviet physics journal | 1985年 / 28卷 / 04期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：251 / 256

共 24 条

[1] ENERGY STRUCTURE OF NARROW-BAND SOLID-SOLUTIONS OF AIIIBV COMPOUNDS INCLUDING TL AND BI
GRINYAYEV, SN
NYAVRO, AV
CHALDYSHEV, VA
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1985, 28 (04): : 3 - 8
[2] VALENCE BAND STRUCTURE OF III-V COMPOUNDS
BRAUNSTEIN, R
KANE, EO
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) : 1423 - &
[3] Pressure effect on electronic band structure of III-V compounds
Rabah, M
Al-Douri, Y
Sehil, M
Rached, D
MATERIALS CHEMISTRY AND PHYSICS, 2003, 80 (01) : 34 - 38
[4] DISORDER SCATTERING IN SOLID-SOLUTIONS OF III-V SEMICONDUCTING COMPOUNDS
MAKOWSKI, L
GLICKSMAN, M
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (03) : 487 - 492
[5] ELECTRONIC BAND STRUCTURE OF GROUP IV ELEMENTS AND OF III-V COMPOUNDS
BASSANI, F
YOSHIMINE, M
PHYSICAL REVIEW, 1963, 130 (01): : 20 - &
[6] Surface energy and crystal structure of nanowhiskers of III-V semiconductor compounds
Sibirev, N. V.
Timofeeva, M. A.
Bol'shakov, A. D.
Nazarenko, M. V.
Dubrovskii, V. G.
PHYSICS OF THE SOLID STATE, 2010, 52 (07) : 1531 - 1538
[7] Parameters for temperature dependence of mean-square displacements for B-, Bi- and Tl-containing binary III-V compounds
Schowalter, Marco
Rosenauer, Andreas
Volz, Kerstin
ACTA CRYSTALLOGRAPHICA SECTION A, 2012, 68 : 319 - 323
[8] THERMODYNAMIC CALCULATION OF THE DEPENDENCE OF THE WIDTH OF THE BAND-GAP ON THE COMPOSITION OF MULTICOMPONENT SOLID-SOLUTIONS BASED ON III-V COMPOUNDS
LITVAK, AM
CHARYKOV, NA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (12): : 1307 - 1310
[9] COMPOSITION DEPENDENCE OF THE RADIATION STABILITY OF THE LUMINESCENCE EMITTED BY SOLID-SOLUTIONS OF III-V COMPOUNDS
GLINCHUK, KD
GUROSHEV, VI
PROKHOROVICH, AV
SEMICONDUCTORS, 1993, 27 (08) : 772 - 773
[10] Geometry and electronic band structure of an ordered monolayer deposition of Bi on III-V(110) semiconductor surfaces
Umerski, A.
Srivastava, G. P.
P C Magazine: The Independent Guide to IBM - Standard Personal Computers, 1994, 13 (21):

← 1 2 3 →