GaN/SiC quasi-substrates for GaN-based LEDs

被引：0
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作者：
Schwegler, V. [1 ]
Kirchner, C. [1 ]
Seyboth, M. [1 ]
Kamp, M. [1 ]
Ebeling, K.J. [1 ]
Melnik, Yu.V. [2 ]
Nikolaev, A.E. [3 ]
Tsvetkov, D. [4 ]
Dmitriev, V.A. [2 ,3 ]
机构：
[1] Department of Optoelectronics, University of Ulm, D-89069 Ulm, Germany
[2] TDI, Inc., Gaithersburg, MD 20877, United States
[3] A.F. Ioffe Phys.-Tech. Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
[4] Crystal Growth Research Center, 194021 St. Petersburg, Russia
来源：
Physica Status Solidi (A) Applied Research | 1999年 / 176卷 / 01期
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页码：99 / 102
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