Characterization of defects in Li-diffused n-type GaAs

被引：0

作者：

Yang, B.H. ^{[1
]}

Egilsson, T. ^{[1
]}

Kristjansson, S. ^{[1
]}

Petursson, J. ^{[1
]}

Gislason, H.P. ^{[1
]}

机构：

[1] Univ of Iceland, Reykjavik, Iceland

来源：

Materials Science Forum | 1994年 / 143-4卷 / pt 2期

关键词：

Semiconducting gallium arsenide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：839 / 844

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