Improved In0.5Ga0.5P/GaAs double heterostructure-emitter bipolar transistor using emitter edge-thinning technique

被引：0
|
作者：
Lin, Yu-Shyan [1 ]
Wu, Yu-Huei [1 ]
Su, Jan-Shing [1 ]
Hsu, Wei-Chou [1 ]
Ho, Shing-Dong [1 ]
Lin, Wei [1 ]
机构：
[1] Natl Cheng Kung Univ, Tainan, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 4 A期
关键词：
Theoretical; (THR); -; Experimental; (EXP);
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摘要：
An improved In0.5Ga0.5P/GaAs double heterostructure-emitter bipolar transistor (DHEBT) has been fabricated by low-pressure metallorganic chemical vapor deposition (LP-MOCVD). The 100 angstroms undoped GaAs spacers grown on both sides of the base are used to improve the recombination of p-n interface and to increase the common-emitter current gain. The emitter edge-thinning technique is used to reduce the surface recombination current and improve the current gain. A current gain of 180 with an offset voltage as low as 60 mV are achieved. Meanwhile, Gummel plot is shown to understand the composition of collector and base currents.
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页码：2007 / 2009
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