共 50 条
- [1] Measurements on a hole trap in neutron-irradiated silicon NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1997, 388 (03): : 361 - 364
- [2] Determination of the effective dominant electron and hole trap in neutron-irradiated silicon detectors NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2004, 516 (01): : 109 - 115
- [3] Ultrasonic attenuation measurements in neutron-irradiated silicon JOURNAL DE PHYSIQUE IV, 1996, 6 (C8): : 625 - 628
- [4] Raman scattering measurements in neutron-irradiated silicon DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 623 - 627
- [5] Correlation between a deep hole trap and the reverse annealing effect in neutron-irradiated silicon detectors NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1998, 409 (1-3): : 194 - 197
- [6] POSITRON-TRAP CENTERS IN NEUTRON-IRRADIATED SILICON-CONTAINING HYDROGEN APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1995, 60 (01): : 81 - 85
- [7] CHARACTERIZATION OF ANNEALING BEHAVIOR OF NEUTRON-IRRADIATED SILICON BY MEANS OF ELECTROCHEMICAL MEASUREMENTS RADIATION EFFECTS LETTERS, 1979, 50 (01): : 33 - 37
- [8] NONORIENTABLE DIVACANCIES IN NEUTRON-IRRADIATED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (11): : 1198 - 1200