HEAVY ION-INDUCED SINGLE EVENT UPSETS OF MICROCIRCUITS; A SUMMARY OF THE AEROSPACE CORPORATION TEST DATA.

被引:0
|
作者
Koga, R. [1 ]
Kolasinski, W.A. [1 ]
机构
[1] Aerospace Corp, Space Sciences Lab,, Los Angeles, CA, USA, Aerospace Corp, Space Sciences Lab, Los Angeles, CA, USA
关键词
D O I
暂无
中图分类号
学科分类号
摘要
5
引用
收藏
页码:1190 / 1195
相关论文
共 50 条
  • [1] HEAVY ION-INDUCED SINGLE EVENT UPSETS OF MICROCIRCUITS - A SUMMARY OF THE AEROSPACE CORPORATION TEST DATA
    KOGA, R
    KOLASINSKI, WA
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1190 - 1195
  • [2] USE OF AN ION MICROBEAM TO STUDY SINGLE EVENT UPSETS IN MICROCIRCUITS
    KNUDSON, AR
    CAMPBELL, AB
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4017 - 4021
  • [3] HEAVY-ION INDUCED SINGLE EVENT UPSETS IN A BIPOLAR LOGIC DEVICE
    KOLASINSKI, WA
    KOGA, R
    CHENETTE, DL
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4470 - 4474
  • [4] Investigation of heavy ion-induced single-event latchup data using survival analysis
    Chen, Dakai
    MICROELECTRONICS RELIABILITY, 2021, 127
  • [5] Heavy-Ion Induced Single Event Upsets in Phase-Change Memories
    Gerardin, S.
    Bagatin, M.
    Paccagnella, A.
    Visconti, A.
    Bonanomi, M.
    Beltrami, S.
    Frost, C.
    Ferlet-Cavrois, V.
    2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2014,
  • [6] Heavy ion and proton induced single event upsets in 3D SRAM
    He, Z.
    Cai, C.
    Liu, T. Q.
    Ye, B.
    Mo, L. H.
    Liu, J.
    MICROELECTRONICS RELIABILITY, 2020, 114 (114)
  • [7] Heavy ion-induced single event effects in active pixel sensor array
    Cai, Yu-Long
    Guo, Qi
    Li, Yu-Dong
    Wen, Lin
    Zhou, Dong
    Feng, Jie
    Ma, Lin-Dong
    Zhang, Xiang
    Wang, Tian-Hui
    SOLID-STATE ELECTRONICS, 2019, 152 : 93 - 99
  • [8] The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs
    Gu, Song
    Liu, Jie
    Bi, Jinshun
    Zhao, Fazhan
    Zhang, Zhangang
    Xi, Kai
    Peng, Kai
    Zhang, Yingjun
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 65 (05) : 1091 - 1100
  • [9] HEAVY-ION MICROSCOPY OF SINGLE EVENT UPSETS IN CMOS SRAMS
    METZGER, S
    DREUTE, J
    HEINRICH, W
    ROCHER, H
    FISCHER, BE
    HARBOESORENSEN, R
    ADAMS, L
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (03) : 589 - 592
  • [10] Heavy ion-induced digital single-event transients in deep submicron processes
    Benedetto, J
    Eaton, P
    Avery, K
    Mavis, D
    Gadlage, M
    Turflinger, T
    Dodd, PE
    Vizkelethyd, G
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) : 3480 - 3485