On the influence of extrinsic point defects on irradiation-induced point-defect distributions in silicon

被引：0
|
作者：
Vanhellemont, J. [1 ]
Romano-Rodriguez, A. [1 ]
机构：
[1] IMEC, Leuven, Belgium
来源：
Applied Physics A: Solids and Surfaces | 1994年 / 58卷 / 06期
关键词：
Bulk sinks - Electron irradiation - Extrinsic point defects - Intrinsic point defects;
D O I：
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学科分类号：
摘要：
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页码：541 / 549
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