Impurity states in a spherical GaAs-(Al,Ga)As quantum dot: Effects of the electric applied field

被引：0

作者：

Niculescu, E.C. ^{[1
]}

机构：

[1] Dept. of Physics, University Politechnica, Bucharest, Romania

来源：

UPB Scientific Bulletin, Series A: Applied Mathematics and Physics | 2000年 / 62卷 / 03期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：65 / 72

共 50 条

[1] Effects of an electric field on the binding energy of a donor impurity in a spherical GaAs-(Ga,Al)As quantum dot with parabolic confinement
Murillo, G
Porras-Montenegro, N
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2000, 220 (01): : 187 - 190
[2] ELECTRIC-FIELD EFFECTS ON SHALLOW IMPURITY STATES IN GAAS-(GA,AL)AS QUANTUM-WELLS
LOPEZGONDAR, J
CASTRO, JDE
OLIVEIRA, LE
PHYSICAL REVIEW B, 1990, 42 (11): : 7069 - 7077
[3] Effects of an electric field on the binding energy and polarizability of shallow hydrogenoic impurity in a GaAs-(Ga,Al)As cylindrical dot
Barnoussi, M
Charrour, R
Fliyou, M
Sayouri, S
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 2001, 7-8 : 133 - 140
[4] Quasistationary states in single and double GaAs-(Ga,Al)As quantum wells: Applied electric field and hydrostatic pressure effects
Schoenhoebel, A. M.
Giron-Sedas, J. A.
Porras-Montenegro, N.
PHYSICA B-CONDENSED MATTER, 2014, 442 : 74 - 80
[5] Applied electric field and hydrostatic pressure effects on quasistationary states in single and coupled GaAs-(Ga,AL)As quantum wells
Schoenhoebel, A. M.
Giron, J. A.
Porras-Montenegro, N.
21ST LATIN AMERICAN SYMPOSIUM ON SOLID STATE PHYSICS (SLAFES XXI), 2014, 480
[6] BINDING-ENERGIES AND DENSITY OF IMPURITY STATES IN SPHERICAL GAAS-(GA,AL)AS QUANTUM DOTS
PORRASMONTENEGRO, N
PEREZMERCHANCANO, ST
LATGE, A
JOURNAL OF APPLIED PHYSICS, 1993, 74 (12) : 7624 - 7626
[7] Effects of hydrostatic pressure and applied electric fields on the exciton states in GaAs-(Ga,Al)As quantum wells
Raigoza, N
Duque, CA
Reyes-Gómez, E
Oliveira, LE
PHYSICA B-CONDENSED MATTER, 2005, 367 (1-4) : 267 - 274
[8] Binding energy and density of shallow impurity states in GaAs-(Ga,Al)As quantum wells:: effects of an applied hydrostatic stress
López, SY
Porras-Montenegro, N
Duque, CA
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (07) : 718 - 722
[9] Binding energy for a shallow donor impurity in GaAs-(Ga, Al)As quantum wells under hydrostatic pressure and applied electric field
Montes, A
Morales, AL
Duque, CA
SURFACE REVIEW AND LETTERS, 2002, 9 (5-6) : 1753 - 1756
[10] ON THE SHALLOW-DONOR STATES IN GAAS-(GA, AL)AS QUANTUM-WELLS UNDER APPLIED ELECTRIC-FIELD
SANTIAGO, RB
OLIVERIA, LE
CASTRO, JDE
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1992, 169 (01): : K25 - K30

← 1 2 3 4 5 →