X-ray diffraction analysis of GaN and GaN/InGaN/GaN double-hetero structures grown on sapphire substrate by metallorganic chemical vapor deposition

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作者：
Sato, Hisao [1 ]
Naoi, Yoshiki [1 ]
Sakai, Shiro [1 ]
机构：
[1] Univ of Tokushima, Tokushima, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 4 A期
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页码：2018 / 2021
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