In view of low-noise and low-power GaAs front-ends

被引：0
|
作者：
De Geronimo, G. [1 ]
机构：
[1] Politecnico di Milano, Milano, Italy
来源：
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 1998年 / 410卷 / 01期
关键词：
Electronic equipment - Gates (transistor) - Semiconducting gallium arsenide - Spurious signal noise;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The use of GaAs in front-end electronics for radiation detection systems has been widely investigated by many authors and several prototypes of GaAs front-ends have been proposed. This work is a review and deepening of the criteria for the design of a low noise and low-power GaAs front-end. Remarks on the choice of the optimum bias point and gate width of the input transistor and on the choice of the shaping are discussed. A comparison of several GaAs FETs in terms of low-frequency noise and achievable resolution is also shown.
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页码：124 / 128
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