TRIPLE IMPLANT (In,Ga)As/InP n-p-n HETEROJUNCTION BIPOLAR TRANSISTORS FOR INTEGRATED CIRCUIT APPLICATIONS.

被引：0

作者：

Masum Choudhury, A.N.M. ^{[1
]}

Tabatabaie-Alavi, K. ^{[1
]}

Fonstad, C.G. ^{[1
]}

机构：

[1] MIT, Dep of Electrical Engineering, & Computer Science, Cambridge,, MA, USA, MIT, Dep of Electrical Engineering & Computer Science, Cambridge, MA, USA

来源：

Electron device letters | 1984年 / EDL-5卷 / 07期

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摘要：

引用

页码：251 / 253

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[1] TRIPLE IMPLANT (IN,GA)AS/INP N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS FOR INTEGRATED-CIRCUIT APPLICATIONS
CHOUDHURY, ANMM
TABATABAIEALAVI, K
FONSTAD, CG
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 251 - 253
[2] SOME CIRCUIT PROPERTIES AND APPLICATIONS OF N-P-N TRANSISTORS
WALLACE, RL
PIETENPOL, WJ
BELL SYSTEM TECHNICAL JOURNAL, 1951, 30 (03): : 530 - 563
[3] OPTIMIZING N-P-N AND P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS FOR SPEED
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[4] DESIGN OF N-P-N ALGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS
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[5] MICROWAVE PERFORMANCES OF N-P-N AND P-N-P ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
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[6] CURRENT TRANSPORT MECHANISM IN N-P-N GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
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REZAZADEH, AA
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[7] HIGH-GAIN INP/INGAAS N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY GAS-SOURCE MBE
NOTTENBURG, RN
TEMKIN, H
PANISH, MB
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1862 - 1862
[8] THE EFFECT OF STRUCTURAL ENHANCEMENTS ON THE RELATIVE PERFORMANCE OF N-P-N AND P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1846 - 1846
[9] LOW-FREQUENCY NOISE PROPERTIES OF N-P-N ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (10) : 2383 - 2394
[10] RESOLVING DEGRADATION MECHANISMS IN ULTRA-HIGH PERFORMANCE N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS
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LI, GP
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (04) : 692 - 697

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