New rapid method for lifetime determination of gate oxide validated with bipolar/CMOS/DMOS technology

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Grp. Microelectronique V., Université de Rennes 1, 35042 Rennes Cedex, France [1 ]
不详 [2 ]
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Microelectronics Reliability | / 39卷 / 6-7期
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页码：759 / 763
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