Boron-Implanted Resistors for Piezoresistive Transducers.

被引：0
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作者：
Schubert, D.
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来源：
Feingeratetechnik Berlin | 1980年 / 29卷 / 07期
关键词：
INTEGRATED CIRCUITS - SEMICONDUCTING SILICON - Ion Implantation;
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摘要：
The determination of the electric and piezoresistive characteristics of implanted resistors shows that no essential differences exist with regard to the surface resistance, the temperature coefficient of the resistance, the piezoresistive coefficient, its temperature coefficient, and the stability of the characteristics between high-temperature-cured implanted elements and diffused elements. A noticeable difference is established only in the case of the contact resistances, which are higher by several factors for implanted resistances than for diffused resistances.
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页码：306 / 308
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