Optimizing free carrier absorption measurements for power devices by physically rigorous simulation

被引：0
|
作者：
Thalhammer, Robert [1 ]
Hille, Frank [1 ]
Wachutka, Gerhard [1 ]
机构：
[1] Infineon Technologies, Munich, Germany
来源：
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | 2000年
关键词：
Absorption - Computer simulation - Geometry - Optimization - Wave propagation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The carrier distribution in the interior of power devices can be determined from free carrier absorption measurements. In this work, a physically rigorous simulation of the entire measurement process is performed to investigate the effects which arise from the wave propagation of the probing beam and the sample preparation. Quantitative results for the optimization of the optical setup and the sample geometries which minimize the unavoidable experimental errors are presented.
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页码：249 / 252
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