Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP

被引：0
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作者：
Barba, D. [1 ]
Salem, B. [1 ]
Morris, D. [1 ]
Aimez, V. [1 ]
Beauvais, J. [1 ]
Chicoine, M. [2 ]
Schiettekatte, F. [2 ]
机构：
[1] Centre de Recherche en Nanofabrication et en Nanocaract´risation, Universit´ de Sherbrooke, Sherbrooke, J1K 2R1, Canada
[2] D̀�partement de Physique, Universit´ de Montŕal, H3C 3J7, Canada
来源：
Journal of Applied Physics | 2005年 / 98卷 / 05期
关键词：
This work was supported by Nano-Québec; the Fonds de Recherche sur la Nature et les Technologies du Québec; and the Natural Sciences and Engineering Research Council of Canada. The authors would like to thank Laurent Isnard and Richard Arès of the Institut des Matériaux et des Systèmes Intelligents for complementary x-ray-diffraction analysis. We are also grateful to Professor Serge Jandl of the University of Sherbrooke for providing us access to the micro-Raman set up;
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