ANALYSIS OF THE THRESHOLD VOLTAGE AND ITS TEMPERATURE DEPENDENCE IN ELECTROLYTE-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (EISFET'S).

被引：0
|
作者：
Barabash, Peter R. [1 ]
Cobbold, Richard S.C. [1 ]
Wlodarski, Wojciech B. [1 ]
机构：
[1] Univ of Toronto, Ont, Can, Univ of Toronto, Ont, Can
来源：
IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
TRANSISTORS, FIELD EFFECT
引用
收藏
页码：1271 / 1282
相关论文
共 50 条
  • [1] ANALYSIS OF THE THRESHOLD VOLTAGE AND ITS TEMPERATURE-DEPENDENCE IN ELECTROLYTE-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (EISFETS)
    BARABASH, PR
    COBBOLD, RSC
    WLODARSKI, WB
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (06) : 1271 - 1282
  • [2] Study of the electrolyte-insulator-semiconductor field-effect transistor (EISFET) with applications in biosensor design
    Shinwari, M. Waleed
    Deen, M. Jamal
    Landheer, Dolf
    MICROELECTRONICS RELIABILITY, 2007, 47 (12) : 2025 - 2057
  • [3] Novel junctionless electrolyte-insulator-semiconductor field-effect transistor (JL EISFET) and its application as pH/biosensor
    Ajay
    Narang, Rakhi
    Saxena, Manoj
    Gupta, Mridula
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2017, 23 (08): : 3149 - 3159
  • [4] Novel junctionless electrolyte-insulator-semiconductor field-effect transistor (JL EISFET) and its application as pH/biosensor
    Rakhi Ajay
    Manoj Narang
    Mridula Saxena
    Microsystem Technologies, 2017, 23 : 3149 - 3159
  • [5] Particle Simulation of Ionic Screening Effects in Electrolyte-insulator-semiconductor Field-effect Transistors
    Chung, In-Young
    Seo, Munkyo
    Park, Chan Hyeong
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2019, 19 (04) : 311 - 320
  • [6] A GENERALIZED THEORY OF AN "ELECTROLYTE-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
    FUNG, CD
    CHEUNG, PW
    KO, WH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) : 8 - 18
  • [7] Particle simulation of electrolytic ion motions for noise in electrolyte-insulator-semiconductor field-effect transistors
    Chung, In-Young
    Lee, Jungwoo
    Seo, Munkyo
    Park, Chan Hyeong
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (12)
  • [8] Analysis of Electrolyte-Insulator-Semiconductor Tunnel Field-Effect Transistor as pH Sensor
    Singh, Ajay
    Narang, Rakhi
    Saxena, Manoj
    Gupta, Mridula
    VLSI DESIGN AND TEST, 2017, 711 : 249 - 258
  • [9] TCAD-Based Simulation Method for the Electrolyte-Insulator-Semiconductor Field-Effect Transistor
    Choi, Bongsik
    Lee, Jieun
    Yoon, Jinsu
    Ahn, Jae-Hyuk
    Park, Tae Jung
    Kim, Dong Myong
    Kim, Dae Hwan
    Choi, Sung-Jin
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (03) : 1072 - 1075
  • [10] Threshold voltage changed by floating gate control in electrolyte-insulator-semiconductor structure
    Kwon, Hyurk-Choon
    Yuan, Heng
    Yeom, Se-Hyuk
    Kang, Shin-Won
    2011 18TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2011,
12345