Fabrication of organic electroluminescence device with ion beam-assisted deposition of ultrathin lithium fluoride as a hole injection layer

被引：0
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作者：
Choi, Sang Hun [1 ]
Jeong, Soon Moon [1 ]
Koo, Won Hoe [1 ]
Baik, Hong Koo [1 ]
机构：
[1] Department of Metallurgical Engineering, Yonsei University, Shinchon 134, Seodeamoon, Seoul 120-749, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2005年 / 44卷 / 16-19期
关键词：
Anodes - Electroluminescence - Electrooptical devices - Evaporation - Indium compounds - Ion beam assisted deposition - Lithium compounds - Quantum efficiency - Tin compounds;
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摘要：
An ultrathin lithium fluoride (LiF) hole injection layer was deposited on an indium-tin-oxide (ITO) anode by an ion-beam-assisted deposition (IBAD) technique to fabricate an organic electroluminescence device. The device with the LiF layer deposited by this method has higher external quantum efficiency than a device with a LiF deposited by conventional thermal evaporation. Moreover, the hole-injection ability of the device prepared by IBAD is better than that of the device produced by a conventional method such as thermal evaporation. It is found that the surface of the LiF layer prepared by IBAD has high surface coverage on an ITO anode because the LiF layer prepared has high adatom mobility due to the ion beam energy. © 2005 The Japan Society of Applied Physics.
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