Self-organization of quantum wire-like morphology on InxGa1-xAs single quantum wells grown on (100)InP vicinal surfaces depending on the substrate misorientation, buffer mismatch and growth temperature

被引：0
|
作者：
EME , Dept. Fis. Apl. i Electrònica, Universität de Barcelona, Avda. Diagonal 645-647, E-08028 Barcelona, Spain [1 ]
不详 [2 ]
机构：
来源：
Microelectron J | / 8-10卷 / 865-873期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 10 条
  • [1] Self-organization of quantum wire-like morphology on InxGa1-xAs single quantum wells grown on (100)InP vicinal surfaces depending on the substrate misorientation, buffer mismatch and growth temperature
    Peiro, F
    Cornet, A
    Morante, JR
    Halkias, G
    Georgakilas, A
    MICROELECTRONICS JOURNAL, 1997, 28 (8-10) : 865 - 873
  • [2] Quantum wire-like morphology in InxGa1-xAs single quantum wells: Dependence on substrate misorientation and intrinsic strain
    Peiro, F
    Cornet, A
    Morante, JR
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 385 - 388
  • [3] QUANTUM WIRE-LIKE INDUCED MORPHOLOGY IN INGAAS WELLS GROWN ON INYAL1-YAS TENSILE BUFFER LAYERS OVER (100)INP VICINAL SURFACES
    PEIRO, F
    CORNET, A
    MORANTE, JR
    GEORGAKILAS, A
    WOOD, C
    CHRISTOU, A
    APPLIED PHYSICS LETTERS, 1995, 66 (18) : 2391 - 2393
  • [4] SELF-ORGANIZATION OF STRAINED QUANTUM-SIZE INXGA1-XAS STRUCTURES GROWN ON MISORIENTED (100)SURFACES OF GAAS DURING SUBMONOLAYER MOLECULAR-BEAM EPITAXY
    GURYANOV, GM
    TSYRLIN, GE
    PETROV, VN
    SAMSONENKO, YB
    GUBANOV, VB
    POLYAKOV, NK
    GOLUBOK, AO
    TIPISEV, SY
    MUSIKHINA, EP
    SEMICONDUCTORS, 1995, 29 (09) : 854 - 857
  • [5] Morphology and Structure of Self-Assembled InxGa1-xAs Quantum Dots Grown on GaAs (100) Using MOCVD
    Othaman, Zulkafli
    Aryanto, Didik
    Ismail, Abd. Khamim
    NANOSCIENCE AND NANOTECHNOLOGY, 2009, 1136 : 36 - 40
  • [6] Quantum wirelike induced morphology in InGaAs wells grown on InyAl1-yAs tensile buffer layers ove (100)InP vicinal surfaces
    Peiro, F.
    Cornet, A.
    Morante, J.R.
    Georgakilas, A.
    Wood, C.
    Christou, A.
    Applied Physics Letters, 1995, 66 (18):
  • [7] Excitation intensity dependence of photoluminescence from narrow ⟨100⟩- and ⟨111⟩A-grown InxGa1-xAs/GaAs single quantum wells
    Sauncy, T
    Holtz, M
    Brafman, O
    Fekete, D
    Finkelstein, Y
    PHYSICAL REVIEW B, 1999, 59 (07): : 5049 - 5055
  • [8] Effect of InxGa1-xAs Interlayer on Surface Morphology and Optical Properties of GaSb/InGaAs Type-Ⅱ Quantum Dots Grown on InP (100) Substrates
    陈虞龙
    高优
    陈弘
    张辉
    何苗
    李述体
    郑树文
    Chinese Physics Letters, 2016, 33 (09) : 124 - 127
  • [9] Cathodoluminescence study of selective epitaxial growth of InxGa1-xAs (x-0.53) thin quantum wells on InP pyramid structures on a masked substrate
    Yamakawa, I
    Oga, R
    Nonogaki, Y
    Fujiwara, Y
    Takeda, Y
    Nakamura, A
    JOURNAL OF CRYSTAL GROWTH, 2002, 241 (1-2) : 85 - 92
  • [10] TEMPERATURE-DEPENDENT TRANSITION FROM 2-DIMENSIONAL TO 3-DIMENSIONAL GROWTH IN HIGHLY STRAINED INXGA1-XAS/GAAS (0.36-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) SINGLE QUANTUM-WELLS
    WANG, SM
    ANDERSSON, TG
    EKENSTEDT, MJ
    APPLIED PHYSICS LETTERS, 1992, 61 (26) : 3139 - 3141
1