Characteristics of TiNx/n-Si Schottky diodes deposited by reactive magnetron sputtering

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作者：
Dimitriadis, C.A. [1 ,2 ]
Lee, J.I. [1 ,3 ]
Patsalas, P. [2 ]
Logothetidis, S. [2 ]
Tassis, D.H. [2 ]
Brini, J. [1 ]
Kamarinos, G. [1 ]
机构：
[1] LPCS, ENSERG, 38016 Grenoble Cedex 1, France
[2] Department of Physics, University of Thessaloniki, 54006 Thessaloniki, Greece
[3] Photonics Research Center, KIST, Seoul 130-650, Korea, Republic of
来源：
Journal of Applied Physics | 1999年 / 85卷 / 8 I期
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摘要：
The effects of substrate vias voltage and deposition temperature on the electrical properties of TiNx/n-Si Schottky diodes were studied. The diodes were fabricated by reactive magnetron sputtering of TiNx films on silicon wafers. As the negative substrate bias voltage increased from -40 to -100 V, the Hooge parameter and effective bulk trap density near the interface first increased and then decreased. The trap characteristics of the diodes were correlated with the stoichiometry of the TiNx measured by ellipsometry.
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页码：4238 / 4242
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