USE OF LOCAL IRRADIATION IN INVESTIGATIONS OF RADIATION PROPERTIES OF SEMICONDUCTORS.

被引：0
|
作者：
Milevskii, L.S.
Garnyk, V.S.
机构：
来源：
Soviet physics. Semiconductors | 1979年 / 13卷 / 07期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTING SILICON
引用
收藏
页码：801 / 804
相关论文
共 50 条
  • [1] USE OF LOCAL IRRADIATION IN INVESTIGATIONS OF RADIATION PROPERTIES OF SEMICONDUCTORS
    MILEVSKII, LS
    GARNYK, VS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (07): : 801 - 804
  • [2] OPTICAL PROPERTIES OF SEMICONDUCTORS.
    Basov, N.G., 1600, (75):
  • [3] VACUUMLESS CRYOSTAT FOR OPTICAL INVESTIGATIONS OF SEMICONDUCTORS.
    Lukin, A.N.
    Yukish, V.A.
    Kavetskii, V.S.
    Instruments and Experimental Techniques (English Translation of Pribory I Tekhnika Eksperimenta), 1979, 22 (3 pt 2): : 863 - 865
  • [4] Imaging local photocurrents in organic semiconductors.
    Fichou, D
    Charra, F
    Gusev, A
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2000, 220 : U367 - U367
  • [5] OPTICAL PROPERTIES OF NONCRYSTALLINE SEMICONDUCTORS.
    Taylor, P.Craig
    1987, : 19 - 44
  • [6] RADIATION GENERATION BY COLLECTIVE PHENOMENA IN SEMICONDUCTORS.
    Gornik, Erich
    Hoepfel, Ralph A.
    1600, (37): : 5 - 6
  • [7] SOME PROPERTIES OF AN IMPURITY BAND OF SEMICONDUCTORS.
    Dolgov, E.L.
    Dugaev, V.K.
    Petrov, P.P.
    1978, 20 (06): : 945 - 947
  • [8] THRESHOLD ENERGY FOR THE FORMATION OF RADIATION DEFECTS IN SEMICONDUCTORS.
    Gerasimenko, N.N.
    Dvurechenskii, A.V.
    Panov, V.I.
    Smirnov, L.S.
    1600, (05):
  • [9] FAR-INFRARED INVESTIGATIONS OF IMPURITY BANDS IN SEMICONDUCTORS.
    Narita, S.
    Kobayashi, M.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1979, 42 (06): : 895 - 911
  • [10] CRITICAL TRANSPORT PROPERTIES OF DOPED SEMICONDUCTORS.
    Kaveh, M.
    Mott, N.F.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1987, 55 (01): : 1 - 8
12345