INVESTIGATION OF THE STRUCTURE OF THE VALENCE BAND OF LEAD SELENIDE.

被引:0
|
作者
Veis, A.N.
Kaidanov, V.I.
Kuteinikov, R.F.
Nemov, S.A.
Rudenko, S.A.
Ukhanov, Yu.I.
机构
来源
| 1978年 / 12卷 / 02期
关键词
BAND STRUCTURE;
D O I
暂无
中图分类号
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号
0805 ; 080502 ; 080801 ; 0809 ;
摘要
An investigation was made of the Hall and transverse Nernst-Ettingshausen effects at temperatures up to 900 degree K, and also of the optical absorption in the range 96-455 degree K. A complex model of the valence band of lead selenide was confirmed and some parameters of the band structure of this compound were determined, including the gap between the inequivalent extrema of the valence band DELTA E//v(0) equals 0. 33 plus or minus 0. 02 eV, the rate of change of this gap with temperature d DELTA E//v/dT equals (- 2. 5 plus or minus 0. 7) multiplied by 10** minus **4 eV/deg, the density- of- states effective mass at the ''heavy'' extremum m//d//2 equals (4. 2 plus or minus 1. 5) m//0, and the 660 degree K value of the ratio of the mobilities of the light and heavy holes b equals 6 plus or minus 1.
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页码:161 / 163
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