Incorporation of oxygen and chlorine atoms into low-temperature (850 °C) silicon epitaxial films by chemical vapor deposition

被引：0
|
作者：
机构：
来源：
Appl Phys Lett | / 21卷 / 2867期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] INCORPORATION OF OXYGEN AND CHLORINE ATOMS INTO LOW-TEMPERATURE (850-DEGREES-C) SILICON EPITAXIAL-FILMS BY CHEMICAL-VAPOR-DEPOSITION
    MIYAUCHI, A
    UEDA, K
    INOUE, Y
    SUZUKI, T
    IMAI, Y
    APPLIED PHYSICS LETTERS, 1995, 66 (21) : 2867 - 2869
  • [2] OXYGEN INCORPORATION DURING LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION GROWTH OF EPITAXIAL SILICON FILMS
    SCHWARTZ, PV
    STURM, JC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (05) : 1284 - 1290
  • [3] OXYGEN AND CARBON INCORPORATION IN LOW-TEMPERATURE EPITAXIAL SI FILMS GROWN BY RAPID THERMAL CHEMICAL VAPOR-DEPOSITION (RTCVD)
    GREEN, ML
    BRASEN, D
    GEVA, M
    REENTS, W
    STEVIE, F
    TEMKIN, H
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (10) : 1015 - 1019
  • [4] Molybdenum contamination in low-temperature epitaxial silicon films grown by remote plasma chemical vapor deposition
    Sharma, R
    Fretwell, J
    Doris, B
    Banerjee, S
    APPLIED PHYSICS LETTERS, 1996, 69 (01) : 109 - 111
  • [5] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION OF BORON DOPED SILICON FILMS
    HALL, LH
    KOLIWAD, KM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1438 - 1440
  • [6] Low-temperature growth of ZnO epitaxial films by metal organic chemical vapor deposition
    B.P. Zhang
    N.T. Binh
    K. Wakatsuki
    N. Usami
    Y. Segawa
    Applied Physics A, 2004, 78 : 25 - 28
  • [7] Low-temperature growth of ZnO epitaxial films by metal organic chemical vapor deposition
    Zhang, BP
    Binh, NT
    Wakatsuki, K
    Usami, N
    Segawa, Y
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 78 (01): : 25 - 28
  • [8] EPITAXIAL SILICON GROWTH ON POROUS SILICON BY REDUCED PRESSURE, LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION
    OULES, C
    HALIMAOUI, A
    REGOLINI, JL
    HERINO, R
    PERIO, A
    BENSAHEL, D
    BOMCHIL, G
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4): : 435 - 439
  • [9] C stability in Si1-yCy epitaxial films grown by low-temperature chemical vapor deposition
    Yagi, S
    Abe, K
    Yamada, A
    Konagai, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4A): : 1499 - 1502
  • [10] C stability in Si1-yCy epitaxial films grown by low-temperature chemical vapor deposition
    Yagi, Shuhei
    Abe, Katsuya
    Yamada, Akira
    Konagai, Makoto
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (4 A): : 1499 - 1502
12345