Origin of the Q = 11 meV bound exciton in GaN

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作者：
Kaufmann, U. [1 ]
Merz, C. [1 ]
Santic, B. [1 ]
Niebuhr, R. [1 ]
Obloh, H. [1 ]
Bachem, K.H. [1 ]
机构：
[1] Fraunhofer-Inst fuer Angerwandte, Festkoerperphysik, Freiburg, Germany
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1998年 / B50卷 / 1-3期
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页码：109 / 112
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