MOCVD-grown, pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm

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Sandia Natl Lab, Albuquerque, United States [1 ]
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Conf Proc Laser Electr Optic Soc Annu Meet | / 169-170期
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Cladding (coating) - Crystal lattices - Electron energy levels - Heterojunctions - Infrared radiation - Light emission - Metallorganic chemical vapor deposition - Molecular beam epitaxy - Photoluminescence - Semiconducting indium compounds - Semiconductor quantum wells - X ray crystallography;
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摘要：
This paper presents results for a midwave injection laser that is fundamentally different from current MBE devices. The laser was grown by metal-organic chemical vapor deposition (MOCVD) and contains InPSb cladding layers. The active region consists of InAs with pseudomorphic, compressively strained InAsSb quantum wells. With this laser design, hole confinement and carrier diffusion are enhanced while ensuring high material quality in the strained active region.
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