Ion-induced stress relaxation and formation of defects in an epitaxial GexSi1-x/Si(100) structure

被引：0
|
作者：
Abramchuk, S.S. [1 ]
Monakhov, E.V. [1 ]
Pokhil, G.P. [1 ]
机构：
[1] Moscow State Univ, Moscow, Russia
来源：
Physics, chemistry and mechanics of surfaces | 1995年 / 11卷 / 10期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1103 / 1109
相关论文
共 50 条
  • [1] The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures
    Glasko, JM
    Zou, J
    Cockayne, DJH
    Gerald, JF
    Kringhoj, P
    Elliman, RG
    DEFECTS IN ELECTRONIC MATERIALS II, 1997, 442 : 367 - 372
  • [2] ION-BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF GEXSI1-X/SI STRUCTURES
    ELLIMAN, RG
    RIDGWAY, MC
    WILLIAMS, JS
    BEAN, JC
    APPLIED PHYSICS LETTERS, 1989, 55 (09) : 843 - 845
  • [3] A PHENOMENOLOGICAL DESCRIPTION OF STRAIN RELAXATION IN GEXSI1-X/SI(100) HETEROSTRUCTURES
    HULL, R
    BEAN, JC
    BUESCHER, C
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (12) : 5837 - 5843
  • [4] NEW SOURCE OF DISLOCATIONS IN GEXSI1-X/SI(100) STRAINED EPITAXIAL LAYERS
    EAGLESHAM, DJ
    MAHER, DM
    KVAM, EP
    BEAN, JC
    HUMPHREYS, CJ
    PHYSICAL REVIEW LETTERS, 1989, 62 (02) : 187 - 190
  • [5] Fabrication of epitaxial GexSi1-x layers by ion implantation
    Elliman, R.G.
    Wong, W.C.
    Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1993, 80-81 (pt 2):
  • [6] ION-BEAM-INDUCED RELAXATION OF STRAINED GEXSI1-X LAYERS
    KRINGHOJ, P
    GLASKO, JM
    ELLIMAN, RG
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2): : 276 - 280
  • [7] STRUCTURE IMAGING OF COMMENSURATE GEXSI1-X/SI(100) INTERFACES AND SUPERLATTICES
    HULL, R
    GIBSON, JM
    BEAN, JC
    APPLIED PHYSICS LETTERS, 1985, 46 (02) : 179 - 181
  • [8] Si/GexSi1-x heterojunction bipolar transistors with the GexSi1-x base formed by Ge ion implantation in Si
    Lombardo, S
    Pinto, A
    Raineri, V
    Ward, P
    LaRosa, G
    Privitera, G
    Campisano, SU
    IEEE ELECTRON DEVICE LETTERS, 1996, 17 (10) : 485 - 487
  • [9] Doping and processing epitaxial GexSi1-x films on Si(100) by ion implantation for Si-based heterojunction devices applications
    Lie, DYC
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (05) : 377 - 401
  • [10] DAMAGE AND STRAIN IN EPITAXIAL GEXSI1-X FILMS IRRADIATED WITH SI
    LIE, DYC
    VANTOMME, A
    EISEN, F
    VREELAND, T
    NICOLET, MA
    CARNS, TK
    ARBETENGELS, V
    WANG, KL
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (10) : 6039 - 6045
12345