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- [7] Ga bound excitons in 3C, 4H and 6H-SiC SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 381 - 384
- [8] Properties of the bound excitons associated to the 3838Å line in 4H-SiC and the 4182Å line in 6H-SiC SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 549 - 554
- [9] ELECTROABSORPTION IN SPACE-CHARGE LAYER OF 6H-SIC SOVIET PHYSICS SOLID STATE,USSR, 1971, 13 (02): : 538 - +